Class-activity-30-solution

Class-activity-30-solution - 1 ECSE-2210 Microelectronics...

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Unformatted text preview: 1 ECSE-2210 Microelectronics Technology Class Activity 30 – Solution 1. a. Find the threshold voltage for a Si n-channel MOS transistor with N A = 10 17 cm –3 , Φ ms = – 0.95 eV, Q i = 10 11 q / cm 2 , and a SiO 2 thickness d = 200 Å. Hint : First calculate V FB . Add this to V T ′ (= threshold value for the ideal case) to get the actual V T . C ox = 0.33 × 10 –12 F/cm / (200 × 10 –8 cm) = 16.5 × 10 –8 F/cm 2 ⎟ ⎟ ⎠ ⎞ ⎜ ⎜ ⎝ ⎛ − + Φ = ox i ms FB 1 C Q q V V FB = – 0.95 V + [ (– 10 11 × 1.6 × 10-19 C/cm 2 ) / C ox ] = – 1.05 V This is the voltage to be applied to the gate to get flat band condition. All the ideal cases are assuming that the bands are under flat band condition before voltages to the gate are applied. ⎟ ⎠ ⎞ ⎜ ⎝ ⎛ − = kT E E n p F i i exp V 417 . 10 10 ln 0259 . 10 17 F i F = = − = φ E E s A s T 2 φ ε = N q K W = 0.102 µ m This is the depletion layer width under inversion, i.e., for a surface potential φ s = 2...
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This note was uploaded on 12/13/2011 for the course EECS EE573 taught by Professor Autine during the Spring '09 term at A.T. Still University.

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Class-activity-30-solution - 1 ECSE-2210 Microelectronics...

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