Fall_2011_HW4 - Soln - ChE 350 Fall 2011 fi/W Homework...

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Unformatted text preview: ChE 350 Fall 2011 fi/W Homework 4 (Due Thursday, Nov. 3) Name: 1. The temperature dependence of the carrier concentration is shown below for an n-type doped semiconductor. Mama WmWWWwWW-ng We“ karmae firegaes W «as a ( / Z 9 9 ,, AAWWWMWW&%XXWWMM (A) Sketch qualitatively the locations of the Fermi levels for the three different temperature regimes of “freeze put”, “extrinsic T-region” and “intrinsic”. 1468?? w [Exam/x Imfriv‘lfl‘: @.§.LL.A_LEC 3%: ELLZ—A-E $6....” M.” "77-77% 7'7‘7‘7'Ev 7—7775, C (B) In which temperature range, will the semiconductor have the highest electrical conductivity? [Explain your answer] gt” Mama @3n6[€i(fle‘ffll€) 0/ ;: elejrieéz Fol’éxtrimgic 5-; : [)i/ej/qé (W Mt Ei/i y a}: mgie fie “ILA-é 7A)Zrlw2c (Bylaw ha? Alpha—g (7" 1 2) éiVMS: @hZMQXp(-'§%, @0’ =Hlelfle+flelflh= Mew/Meta” C33 T(‘IfoK)—) 5.70.12, @ T= éiak >20“: 2.25 t/ ' max/(e Z/{ka/zecmiw W/Y’ (6)6’aieaiona) oM/anga’mcofia) W / 0'(T)‘h(T)/el{x(e+ah) :9 0m - MT.) Mm ) ’ ¥ r02) mm) 1e WW“) / W / ChE 350 Fall 2011 3 Mg 77 Homework 4 (Due Thursday, Nov. 3) Name: (I I 7 3. An Si bar that is 1 pm long with a cross-sectional area of 100 um2 is doped with 1017 cm'3 phosphorus. Find the current at 300K with 10 V applied. ...
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