Quiz 9 potential problems ChE 350 F09

Quiz 9 potential problems ChE 350 F09 - (c) Estimate the...

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Sample questions for ChE 350 Fall 2009 Quiz 9 Name:________________________ 1 1. At room temperature, the electrical conductivity of intrinsic silicon is -1 -1 6 cm 10 4 Ω × . The electron and hole mobilities of silicon are 1 1 2 sec V cm 1400 and 1 1 2 sec V cm 500 , respectively. (a) What is the intrinsic carrier concentration in silicon? _______________________ (b) What fraction of atoms in silicon contributes a conduction electron? ( a Si =0.543 nm) _______________________
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Unformatted text preview: (c) Estimate the electrical conductivity of silicon doped with boron at a concentration of -3 17 cm 10 1 . __________________________ (d) Estimate the electrical current that will flow through a bar of silicon that is 10 m long and 5 nm in diameter, with an electrical conductivity of -1-1 6 cm 10 4 , when 1 V is applied down the length of the bar. _____________________________...
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This note was uploaded on 12/13/2011 for the course CHE 350 taught by Professor Sanchez during the Spring '08 term at University of Texas at Austin.

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