Quiz 9 potential problems ChE 350 sp10

Quiz 9 potential - − − respectively(a What is the intrinsic carrier concentration in silicon(b What fraction of atoms in silicon contributes a

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Sample question for ChE 350 Spring 2010 Quiz 9 Name:________________________ 1 1. A piece of silicon doped with boron (p-type dopant) has a resistivity of 100 Ω cm at room temperature. (A) If the hole mobility is sec V cm 550 2 0 = μ , what is the dopant concentration? (Show your work) ( C 10 6 . 1 19 × = e ) (B) What fraction of Si atoms in the crystal is substituted by boron atoms? ( a Si =0.543 nm) 2. At room temperature, the electrical conductivity of intrinsic silicon is -1 -1 6 cm 10 4 Ω × . The electron and hole mobilities of silicon are 1 1 2 sec V cm 1400 and 1 1 2 sec V cm 500
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Unformatted text preview: − − , respectively. (a) What is the intrinsic carrier concentration in silicon? (b) What fraction of atoms in silicon contributes a conduction electron? ( a Si =0.543 nm) (c) Estimate the electrical conductivity of silicon doped with boron at a concentration of -3 17 cm 10 1 × . (d) Estimate the electrical current that will flow through a bar of silicon that is 10 μ m long and 5 nm in diameter, with an electrical conductivity of -1-1 6 cm 10 4 Ω × − , when 1 V is applied down the length of the bar....
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This note was uploaded on 12/13/2011 for the course CHE 350 taught by Professor Sanchez during the Spring '08 term at University of Texas at Austin.

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