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Unformatted text preview: (B) Draw the band diagram for the same p-n junction at high temperature (>1000 o C). 3. A silicon sample is doped with 10 17 As atoms/cm 3 . The intrinsic free electron concentration in Si at room temperature is 3 10 10 5 . 1 cm . (A) What is the equilibrium hole concentration p at 300K? (B) Sketch the position of the Fermi level in the band gap....
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- Spring '08
- Chemical Engineering