Quiz 11 potential problems ChE 350 sp10

Quiz 11 potential problems ChE 350 sp10 - Sample question...

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Sample question for ChE 350 Spring 2010 Quiz 11 Name:________________________ 1 1. The current-voltage data for a new photovoltaic device is shown below under 100 mW/cm 2 illumination. [From W. Ma, et al., “Photovoltaic Devices Employing Ternary PbS x Se 1-x Nanocrystals,” Nano Letters 2009; 9: 1699-1703]. From the data, provide the following parameters for this device: (A) Short circuit current density (in units of mA/cm 2 ): ______________________ (B) Open circuit voltage (in units of volts): ___________________ (C) Fill factor: _______________________ (D) Power conversion efficiency: ____________________________ 2. (A) Sketch a typical band diagram for a p-n junction at room temperature. (B) Sketch a band diagram expected for the same p-n junction at high temperature (i.e., >1000 o C). (C) What will the open circuit voltage of a silicon p-n junction solar cell be at high temperature (>1000 o C)? Explain.
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Sample question for ChE 350 Spring 2010 Quiz 11 Name:________________________
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Quiz 11 potential problems ChE 350 sp10 - Sample question...

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