# 867f09hw6 - 6 cm/s. Based on an electron mobility of 1200...

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ELEG 867 - Devices for Light Detection from the Submillimeter to the Ultraviolet – Fall 2009 Homework #6 - due Wednesday, 14 October 2009, in class ( No class Friday 10/16; Quiz 3 Monday 10/19 ) Photodetectors 1. Calculate the photocurrent density from red light in a silicon p-i-n photodiode, with an intrinsic region width of 2 0 μ m. Assume that the photon flux is 10 17 cm -2 s -1 , and the absorption coefficient α = 10 3 cm -1 . Account for the non-uniform generation rate across the intrinsic region, and the surface reflection (in air) due to the index of refraction n = 3.4. What is the total current for a junction area A = 10 -4 cm 2 ? 2. Calculate the -3dB frequency for the above p-i-n photodiode, assuming an electron velocity of 10
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Unformatted text preview: 6 cm/s. Based on an electron mobility of 1200 cm 2 /V-s, what is the electric field, and the reverse bias voltage needed to produce this velocity? 3. Estimate the solar insolation AirMass number from the length of the shadow of a vertical rod, h = 1 meter high. The shadow length s = 1.118 meter long. Homework assignments will appear on the web at: http://www.ece.udel.edu/~kolodzey/courses/eleg867f09.html. Note: On each homework and report submission, please give your name, the due date, assignment number and the course number....
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## This note was uploaded on 12/14/2011 for the course ELEG 687 taught by Professor Kolodzey during the Fall '09 term at University of Delaware.

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