867f09hw9 - Assume that an impact energy of E crit = 3/2 E...

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ELEG 867 - Devices for Light Detection from the Submillimeter to the Ultraviolet – Fall 2009 Homework #9 - due Friday, 6 November 2009, 4 pm in 203 Evans or 140 Evans (no lecture) 1. Design a p-type BIB Detector based on the Ge:Ga extrinsic photoconductor. The parameters are N A (Ga) = 5 x 10 17 cm -3 and N D = 1 x 10 13 cm -3 in the IR active layer; the blocking layer thickness is t B = 4 μ m; and the hole mean free path is 0.2 μ m. (a) Draw the band diagram (as Fig. 3.5), labeling all regions. (b) Determine the thickness of the IR layer, t IR ; and (c) the applied bias V b that yield sufficient field and impact energy to ionize the neural Ga impurities (thermal breakdown).
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Unformatted text preview: Assume that an impact energy of E crit = 3/2 E i is required, where E i is the Ga dopant ionization energy. (d) Estimate the quantum efficiency for a single pass through your design, accounting for normal incidence reflection. 2. Problem 6.4, from Rieke, p. 184. 3. Problem 6.5, from Rieke, p. 184. 4. Problem 6.6, from Rieke, p. 184. Homework assignments will appear on the web at: http://www.ece.udel.edu/~kolodzey/courses/eleg867f09.html. Note: On each homework and report submission, please give your name, the due date, assignment number and the course number....
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