Chapter 43559Section 43.6Electrical Conduction in Metals, Insulators, and SemiconductorsP43.36(a)Eg=114. eV for Sihf==×=×−−1 141 60 101 82 101919....eVeVJ eVJafejso f≥×275 1014. Hz(b)cf=λ; λµ××=×=−cf300 10109 101098146..msHzmm (in the infrared region)P43.37Photons of energy greater than 2.42 eV will be absorbed. This means wavelength shorter than×⋅×××=−−hcE6626 102 42 1 60 1051434819JsJnmej.All the hydrogen Balmer lines except for the red line at 656 nm will be absorbed.P43.38Ehcg×≈−−650 101913489.mJ eVejP43.39If ≤×−100 106.m, then photons of sunlight have energyEhc≥=FHGIKJ=−max..1124348619meV1.60 10JeVej.Thus, the energy gap for the collector material should be Eg≤.eV . Since Si has an energy gapEg≈. eV, it will absorb radiation of this energy and greater. Therefore, Si is acceptable as amaterial for a solar collector.P43.40If the photon energy is 5.5 eV or higher, the diamond window will absorb. Here,hfhcbgmaxmin.55±eV:min.×−−hc55
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This note was uploaded on 12/15/2011 for the course PHY 203 taught by Professor Staff during the Fall '11 term at Indiana State University .