1218_Physics ProblemsTechnical Physics

1218_Physics ProblemsTechnical Physics - Chapter 43 Section...

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Chapter 43 559 Section 43.6 Electrical Conduction in Metals, Insulators, and Semiconductors P43.36 (a) E g = 114 . eV for Si hf == × = × −− 1 14 1 60 10 1 82 10 19 19 .. . . eV eV J eV J a f ej so f ≥× 275 10 14 . H z (b) cf = λ ; λµ × × = c f 300 10 109 10 109 8 14 6 . . ms Hz m m (in the infrared region) P43.37 Photons of energy greater than 2.42 eV will be absorbed. This means wavelength shorter than ×⋅× ×× = hc E 6626 10 2 42 1 60 10 514 34 8 19 Js J nm e j . All the hydrogen Balmer lines except for the red line at 656 nm will be absorbed. P43.38 E hc g × 650 10 191 34 8 9 . m J e V e j P43.39 If ≤× 100 10 6 . m, then photons of sunlight have energy E hc ≥= F H G I K J = max . . 1 124 34 8 61 9 m eV 1.60 10 J eV e j . Thus, the energy gap for the collector material should be E g . eV . Since Si has an energy gap E g . eV, it will absorb radiation of this energy and greater. Therefore, Si is acceptable as a material for a solar collector. P43.40 If the photon energy is 5.5 eV or higher, the diamond window will absorb. Here, hf hc bg max min . 55±eV: min . × hc 55
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This note was uploaded on 12/15/2011 for the course PHY 203 taught by Professor Staff during the Fall '11 term at Indiana State University .

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