LectureAid11-12

LectureAid11-12 - EE 541 Prof. John Choma, Professor Class...

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EE 541 Class Lecture Weeks 11-12 Transmission Lines and IC Interconnect Parasitics Fall 2008 Semester Prof. John Choma, Professor Ming Hsieh Department of Electrical Engineering University of Southern California University Park; MC: 0271; PHE #604 Los Angeles, California 90089-0271 213-740-4692 [USC Office] 213-740-7581 [USC Fax] johnc@usc.edu
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University of Southern California EE 541 Fall 2008/Choma 244 Overview Of Lecture Overview Of Lecture z Integrated Circuit Capacitors ± Single Conductor Over Ground Plane ± Capacitor Sandwiches ± Capacitor Metrics And Models z Integrated Circuit Inductances ± Bond Wire ± Spirals ± Inductor Metrics And Models z Distributed Phenomena ± Transmission Line Models For Interconnects ± Distributed Model ± Response Characteristics And Performance Metrics
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University of Southern California EE 541 Fall 2008/Choma 245 Monolithic Capacitances Monolithic Capacitances z Chip Capacitance ± Indigenous To All Chip Interconnect Metalization ± Parasitic Capacitance Of Metalization Critical In RF Circuits ± Capacitance Equations ² Pertinent To Metalization Parasitics ² Pertinent To Actual Capacitor Realizations ² Mathematical Relationships ¾ Semi-Empirical ¾ Accounts For Fringing And Other Parasitic Phenomena z Capacitance Types ± Single Conductor Over Ground Plane ± Conductor Sandwiched Between Two Ground Planes ± Conductor Sandwiched Between Two Conductors Lying Over Ground Plane
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University of Southern California EE 541 Fall 2008/Choma 246 L W Metal Conductor Top View W T Metal H Cross Section Ground Plane Single Conductor Over Ground Single Conductor Over Ground z Diagram z Total Capacitance To Ground ± C T = C + C p = C(1 + η p ) ± C Is Natural “Parallel Plate” Capacitance ² ε Is Dielectric Constant Of Medium Having Thickness H ² If Medium Is Silicon, ε = 1.05 pF/cm ± C p Is Parasitic “Fringing” Capacitance ± Normalized Parasitic Capacitance Is η p ± The Larger W Is In Comparison With H And The Geometric Mean Of T And H , The Smaller Is The Parasitic Capacitive Component ε WL C H = pp C η C = 0.75 p p C H HT H η 0.77 1.06 CW W W ⎛⎞ =≈ + + ⎜⎟ ⎝⎠
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University of Southern California EE 541 Fall 2008/Choma 247 Single Conductor Parasitic C Single Conductor Parasitic C 0 0.5 1 1.5 2 2.5 123456 7891 0 Metal Width -To- Ground Height, W/H Parasitic Capacitance Factor, C p /C T/H = 0.1 T/H = 0.001
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University of Southern California EE 541 Fall 2008/Choma 248 L W Metal Conductor Top View W T Metal H 1 Conductive Plane H 2 Conductive Plane Capacitor Sandwich Capacitor Sandwich z Diagram z Total Capacitance To Ground ± C T = C + C p = C(1 + η p ) ± C Is Natural “Parallel Plate” Capacitance ± C p Is Parasitic “Fringing” Capacitance ± Normalized Parasitic Capacitance Is η p ± The Larger W Is In Comparison With H And The Geometric Mean Of T And H , The Smaller Is The Parasitic Capacitive Component ε WL C H = pp C η C = 0.25 2 0.75 p 21 p 2 12 2 C HH T H η 0.77 0.89 1 CW W W H H H ⎛⎞ ⎜⎟ =≈ + + + + ⎝⎠ H H H + ±
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University of Southern California EE 541 Fall 2008/Choma 249
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LectureAid11-12 - EE 541 Prof. John Choma, Professor Class...

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