154_lecture_5 - 11/3/2011 Lecture-5 Instrumentation...

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11/3/2011 1 Lecture-5 Rutherford Backscattering Spectroscopy Lee Chow Institute of Electro-Optics Chang Gung University Oct. 11, 2011 Lecture-5 2 Instrumentation Oct. 11, 2011 Lecture-5 3 Ion Sources Oct. 11, 2011 Lecture-5 4 General IONIX Tandem Oct. 11, 2011 Lecture-5 5 Accelerator Oct. 11, 2011 Lecture-5 6 Goniometer
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11/3/2011 2 Oct. 11, 2011 Lecture-5 7 RBS chamber Oct. 11, 2011 Lecture-5 8 Important formula of RBS measurements   K m m m m m E E o 2 2 1 1 2 / 1 2 1 2 2 1 cos sin 2 sin 1 4 ) ( 4 2 2 2 1 E e z z min 2 2 4 2 1 2 ln 2 T mv mv n e Z dx dE Oct. 11, 2011 Lecture-5 9 RBS yield for different elements Oct. 11, 2011 Lecture-5 10 Applications Oct. 11, 2011 Lecture-5 11 Thickness of thin metal films on silicon substrate Oct. 11, 2011 Lecture-5 12 TaSi formation
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11/3/2011 3 Oct. 11, 2011 Lecture-5 13 Composition of High T c superconductor, BSCC Oct. 11, 2011 Lecture-5 14 0 5000 10000 15000 20000 100 200 300 400 500 600 Channel Yield Pt edge Co edge Co Pt Pt-Co alloy Oct. 11, 2011 Lecture-5 15 Oct. 11, 2011 Lecture-5 16 ZnO thin films on glass substrate Oct. 11, 2011 Lecture-5 17 CdS thin film on glass substrate Oct. 11, 2011 Lecture-5 18 Channeling A single crystal Ion channeling along a channel inside a single crystal
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11/3/2011 4 Oct. 11, 2011 Lecture-5 19 For RBS measurements, we usually want to avoid the channeling effect, because the typical theoretical analysis of RBS assumes that the locations of atoms inside the solid are completely random. So when we make RBS measurements we use the following techniques to avoid channeling effect. Oct. 11, 2011
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154_lecture_5 - 11/3/2011 Lecture-5 Instrumentation...

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