Unformatted text preview: 3) A silicon bar is doped uniformly such that N a = 10 14 cm-3 . One side of the sample is then doped with donors such that N d = 10 17 cm-3 . a. Using compensation, explain why this is a P-N junction. See the figure below b. What are the equilibrium carrier concentrations, n o and p o , far away from the depletion region on each side? c. Calculate V o , x no , x po , and W at 300K....
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- Fall '08
- P-n junction, Si p-n junction, equilibrium band diagram, Fermi level positions