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Unformatted text preview: 3) A silicon bar is doped uniformly such that N a = 10 14 cm-3 . One side of the sample is then doped with donors such that N d = 10 17 cm-3 . a. Using compensation, explain why this is a P-N junction. See the figure below b. What are the equilibrium carrier concentrations, n o and p o , far away from the depletion region on each side? c. Calculate V o , x no , x po , and W at 300K....
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This note was uploaded on 12/28/2011 for the course ECE 132 taught by Professor Denbaars during the Fall '08 term at UCSB.
- Fall '08