This preview shows page 1. Sign up to view the full content.
Unformatted text preview: V CB = -2 V and -10 V . If the base width at equilibrium is 1 m , comment on the Early effect for this device. 4. A Si p-n-p transistor has the following properties at room temperature: p = n = 0.1 s D p = D n = 10 cm 2 / s L p = L n = 10 m N E = 10 19 cm-3 N B = 10 16 cm-3 N C = 10 16 cm-3 W = metallurgical base width = 1.5 m = distance from base-emitter junction to base-collector junction A = cross-sectional area = 10-5 cm 2 Calculate the neutral base width W B for V CB = 0 V and V EB = 0.6 V . Using this value, calculate , T , = T , and ....
View Full Document
- Fall '08