Unformatted text preview: V CB = -2 V and -10 V . If the base width at equilibrium is 1 μm , comment on the Early effect for this device. 4. A Si p-n-p transistor has the following properties at room temperature: τ p = τ n = 0.1 μs D p = D n = 10 cm 2 / s L p = L n = 10 μm N E = 10 19 cm-3 N B = 10 16 cm-3 N C = 10 16 cm-3 W = metallurgical base width = 1.5 μm = distance from base-emitter junction to base-collector junction A = cross-sectional area = 10-5 cm 2 Calculate the neutral base width W B for V CB = 0 V and V EB = 0.6 V . Using this value, calculate γ, α T , α = γα T , and β ....
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This note was uploaded on 12/28/2011 for the course ECE 132 taught by Professor Denbaars during the Fall '08 term at UCSB.
- Fall '08