F2011_ECE132_Quiz2_Wed_Soln

F2011_ECE132_Quiz2_Wed_Soln - on the back 3) Which...

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ECE 132 Quiz 2 October 13, 2010 Name )< £'( 1) Doping silicon (Si), a group V element, with phosphorus (P), group VI element, causes an extra energy level to become available in the band gap. For P in Si, calculate this new energy level's distance away from the valence/conduction band. (Hint: There are two values that need to be changed from the Hydrogen energy levels) If ,"1 Z_ L~ y1 'Z. Z . bJ?·( 4 ii<:); :::. fVl~ "L.'1 __ zr> ~ f;, ~~ \I f,.J6-r) <.. - (!). \ D -1 e~ -2.-D .3 1.1('2 )(\0 2) What will this energy level be for phosphorus in germanium (Ge)? "'-0 \ - (9 • b G q 6e\J '~ 3 0 Y'-1. e \J LL 11.08 'l-lo-2.\ e.\1 # Additional Questions and constants/formulas
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Unformatted text preview: on the back 3) Which combination (P in Si or Pin Ge) would be best in terms of electrical performance' and why? 4) Plot and label the new energy levels for both cases in the band diagrams below: Si Ge----------------------Ec &quot;300~\]1 __-_.------ ~ tef-------Ev Ev-------m*q4 E =----n 2*n2*h2*(4*rr*E)2-13.6eV ; En = 2 for Hydrogen n q = 1.6 * 10-19C ; mo = 9.11 * 10-31kg ; h = 1.05 * 10-34j . S ; Eo = 8.85 * 10-12 F 1m . 1 eV = 1.6 * 10-19 joules For Germanium: m~e = 0.56mo ; Er,Ge = 16p For Silicon: Er,Si = 11.8...
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This note was uploaded on 12/28/2011 for the course ECE 132 taught by Professor Denbaars during the Fall '08 term at UCSB.

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F2011_ECE132_Quiz2_Wed_Soln - on the back 3) Which...

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