ps6_2011

ps6_2011 - emitter current. Choose Rb1 so that the base is...

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1 ECE2c Problem set #6: Problem 3: Common-drain amplifier The PMOS FET has 1.0 nm oxide thickness, 250 nm gate length, and a 0.5 V threshold. Mobility is 200 cm^2/(V-s). lambda is zero V -1 . Use a constant- mobility model. The supplies are +5V and -5 V. The load resistance is 50 kOhm. The generator resistance is 100kOhm, and Rg is 1 MOhm. a) We want to operate the FET at 1/2 mA drain current at 0.6 Volts=|Vgs|. Find the gate width necessary to do this. +Vss -Vdd RL Rs Rg Rgen Vgen Vin Vout b) Give all resistor values c) Find the small signal Vout/Vin, Vin/Vgen and Vout/Vgen d) Find the amplifier input and output impedance e) Find the maximum positive-going and negative going outputs. Problem 4: Common-collector amplifier. The bjt has beta=100 and Va=100 V. The supplies are plus and minus 3.3 Volts. The transistor is to be biased at 2 mA
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Unformatted text preview: emitter current. Choose Rb1 so that the base is at -100mV. The generator is 10kOhm; the load is 100 Okms. V gen R gen C in R b1 Q 1 R EE R L C out V cc V out-V ee a) Give all resistor values b) Find the small signal Vout/Vin, Vin/Vgen and Vout/Vgen c) Find the amplifier input and output impedance d) Find the maximum positive-going and negative going outputs. V in V out Q 1 Q 2 R 1 R 2 Problem 3 . Nodal Analysis exercise. This is a "super-buffer". Ignore DC bias analysis. You dont need it. The two transistors have transconductance gm1 and gm2 respectively. Their drain-source resistances Rds1 and Rds2 are both infinity. a) Compute Vout/Vin by nodal analysis. b) find numerical values of Vout/Vin given gm1=10 mS, gm2=100 mS, R1=5kOhm, R2=500 Ohms....
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