set_2_FET_models

set_2_FET_models - class notes, M. Rodwell, copyrighted...

Info iconThis preview shows pages 1–11. Sign up to view the full content.

View Full Document Right Arrow Icon
class notes, M. Rodwell, copyrighted 2011 ECE 2C, notes set 2: FET Models Mark Rodwell University of California, Santa Barbara [email protected] 805-893-3244, 805-893-3262 fax
Background image of page 1

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
class notes, M. Rodwell, copyrighted 2011 N-Channel MOSFET
Background image of page 2
class notes, M. Rodwell, copyrighted 2011 N-Channel MOSFET
Background image of page 3

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
class notes, M. Rodwell, copyrighted 2011 Physical Sketch
Background image of page 4
class notes, M. Rodwell, copyrighted 2011 MOSFET Physical Structure N+ source N+ drain source contact (silicide) drain contact (silicide) N+ poly gate gate metal (silicide) dielectric sidewall gate oxide P substrate S D S D S D S G G W g Cross-Section Layout P substrate gate dielectric N+ polysilicon gate inversion layer (6 FETs, each of gate width W g , connected in parallel)
Background image of page 5

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
class notes, M. Rodwell, copyrighted 2011 MOSFET I-V characteristics
Background image of page 6
class notes, M. Rodwell, copyrighted 2011 MOSFET I-V characteristics
Background image of page 7

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
class notes, M. Rodwell, copyrighted 2011 I d V gs V th V MOSFETs: Three Regions of Gate Voltage 2 , ) ( limited mobility is current , threshold above little a When th gs D V V I V ) ( velocity current , threshold far , V V V I V th v D mobility-limited velocity-limited ld" subthresho " : off (almost) r transisto , threshold than less V almost off / g sat L v V
Background image of page 8
class notes, M. Rodwell, copyrighted 2011 MOSFET DC Characteristics: Mobility-Limited Case : current limited mobility I d V gs V th mobility-limited velocity-limited voltage, knee the n larger tha voltages drain for Applies I D V DS increasing V GS ) 1 ( ) )( 2 / ( 2 , DS th gs g g ox D V V V L W c I
Background image of page 9

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
class notes, M. Rodwell, copyrighted 2011 MOSFET DC Characteristics: Velocity-Limited Case ) )( 1 ( , V V V V v W c
Background image of page 10
Image of page 11
This is the end of the preview. Sign up to access the rest of the document.

This note was uploaded on 12/28/2011 for the course ECE 2C taught by Professor Yue during the Fall '08 term at UCSB.

Page1 / 36

set_2_FET_models - class notes, M. Rodwell, copyrighted...

This preview shows document pages 1 - 11. Sign up to view the full document.

View Full Document Right Arrow Icon
Ask a homework question - tutors are online