TSAL6100

TSAL6100 - TSAL6100 Vishay Semiconductors High Power...

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Document Number: 81009 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com Rev. 1.5, 05-Sep-08 99 High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs TSAL6100 Vishay Semiconductors DESCRIPTION TSAL6100 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power molded in a blue-gray plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): 5 • Peak wavelength: λ p = 940 nm • High reliability • High radiant power • High radiant intensity • Angle of half intensity: ϕ = ± 10° • Low forward voltage • Suitable for high pulse current operation • Good spectral matching with Si photodetectors • Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC APPLICATIONS • Infrared remote control units with high power reqirements • Free air transmission systems • Infrared source for optical counters and card readers • IR source for smoke detectors Note Test conditions see table “Basic Characteristics” Note MOQ: minimum order quantity Note T amb = 25 °C, unless otherwise specified 94 8 3 8 9 PRODUCT SUMMARY COMPONENT I e (mW/sr) ϕ (deg) λ P (nm) t r (ns) TSAL6100 130 ± 10 940 800 ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TSAL6100 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V R 5V Forward current I F 100 mA Peak forward current t p /T = 0.5, t p = 100 μs I FM 200 mA Surge forward current t p = 100 μs I FSM 1.5 A Power dissipation P V 160 mW Junction temperature T j 100 °C Operating temperature range T amb - 40 to + 85 °C
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This note was uploaded on 12/28/2011 for the course ECE 2C taught by Professor Yue during the Fall '08 term at UCSB.

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TSAL6100 - TSAL6100 Vishay Semiconductors High Power...

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