Homework4.11

Homework4.11 - ECE 124d/256c Homework 4 Due: Wed Feb , 2011...

Info iconThis preview shows pages 1–2. Sign up to view the full content.

View Full Document Right Arrow Icon
ECE 124d/256c Homework 4 Due: Wed Feb , 2011 Reading: DSE Chapter 4 to 4.3.3 1. For a transistor with the geometry below, calculate values for the parasitic capacitances and re- sistances as follows: Cgdo, Cdb, Cg, Cd (sidewall), Rs, Rd. Dark color is contact metal, light col- or is diffusion, white is poly (gate). This size corresponds to a minimum size transistor in your 0.18um technology. Find the parasitics above for 2x, 5x, and 10x this width. . All measurements are in microns, please assume the following process parameters: n-chan: φ b=0.8, Vt=0.5v, kp=1.8e-4A/V 2 , Vd(sat)=0.4, Cj=1fF/ μ m 2 , mj=0.37, Cjsw=0.24fF/ μ m, mjsw=0.15, tox=4nm, Cgdo=0.8f/ μ m, rsh = 7/sq p-chan: φ b=0.84, Vt=-0.5v, kp=-3.6e-5A/V 2 , Vd(sat)=-1.5, Cj=1.2fF/ μ m 2 , mj=0.41, Cjsw=0.19fF/ μ m, mjsw=0.35, tox=4nm, Cgdo=0.65f/ μ m, rsh = 7/sq 2. Find the propagation delay time for the inverter below. Assume that Vdd is 1.8V and use the electrical parameters from above. Ignore miller feedthough,
Background image of page 1

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
Image of page 2
This is the end of the preview. Sign up to access the rest of the document.

Page1 / 2

Homework4.11 - ECE 124d/256c Homework 4 Due: Wed Feb , 2011...

This preview shows document pages 1 - 2. Sign up to view the full document.

View Full Document Right Arrow Icon
Ask a homework question - tutors are online