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prob_set2

# prob_set2 - ECE202A Problem Set#2 Device Modelling and...

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ECE202A Problem Set #2: Device Modelling and Simple Broadband Circuits: Due Monday Nov. 1 1.FET common-source amplifier In the circuit below, Rbb is 50 ohms, as is Rcc. Vcc is 7.5 volts. The generator and load resistances are 50 ohms. The FET Q1 has an Idss of 100 mA and a pinchoff voltage of -2 volts. Cgs=1 pF, Cgd=0.05 pF, Rg=10 ohms, Ri=0 ohms, Rds=200 ohms. Source resistance is 0 ohms. All other device parasitic parameters are negligible. 1.1 Calculate the circuit DC bias conditions, and find the drain current and the drain voltage. 1.2 Calculate element values for, and draw the device equivalent circuit. Calculate by hand approximate methods the magnitude and 3-dB bandwidth of S 21 of the amplifier. Sketch the input reflection coefficient as a function of frequency on a Smith chart, indicating their values at 20 GHz 1.3 Enter the circuit on EESOF. Use a small signal equivalent circuit model for the transistor. Generate plots of the transistor S-parameters and G max from DC-40 GHz (dB magnitude of all parameters, S 21 & G max

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