AT-42035Up to 6 GHz Medium Power Silicon Bipolar TransistorData SheetFeatures•High Output Power:21.0 dBm Typical P1 dBat 2.0 GHz20.5 dBm Typical P1 dBat 4.0 GHz•High Gain at 1 dB Compression:14.0 dB Typical G1 dB at 2.0 GHz 9.5 dB Typical G1 dB at 4.0 GHz •Low Noise Figure:1.9 dB Typical NFO at 2.0 GHz•High Gain-Bandwidth Product:8.0 GHz Typical fT•Cost Effective Ceramic Microstrip Package35 micro-X PackageDescriptionAvago Technologies' AT-42035 is a general purpose NPN bipo-lar transistor that offers excellent high frequency performance. The AT-42035 is housed in a cost effective surface mount 100 mil micro-X package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 20 emitter finger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium power applications. This device is designed for use in low noise, wideband amplifier, mixer and oscilla-tor applications in the VHF, UHF, and microwave frequencies. An optimum noise match near 50 Ω up to 1 GHz, makes this device easy to use as a low noise amplifier. The AT-42035 bipolar transistor is fabricated using Avago’s 10 GHz fT Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, self-alignment techniques, and gold metalization in the fabrication of this device.