AV02-0299EN

AV02-0299EN - AT-42035 Up to 6 GHz Medium Power Silicon...

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AT-42035 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Features High Output Power: 21.0 dBm Typical P 1 dB at 2.0 GHz 20.5 dBm Typical P 1 dB at 4.0 GHz High Gain at 1 dB Compression: 14.0 dB Typical G 1 dB at 2.0 GHz 9.5 dB Typical G 1 dB at 4.0 GHz Low Noise Figure: 1.9 dB Typical NF O at 2.0 GHz High Gain-Bandwidth Product: 8.0 GHz Typical f T Cost Effective Ceramic Microstrip Package 35 micro-X Package Description Avago Technologies' AT-42035 is a general purpose NPN bipo- lar transistor that offers excellent high frequency performance. The AT-42035 is housed in a cost effective surface mount 100 mil micro-X package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 20 emitter finger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium power applications. This device is designed for use in low noise, wideband amplifier, mixer and oscilla- tor applications in the VHF, UHF, and microwave frequencies. An optimum noise match near 50 Ω up to 1 GHz, makes this device easy to use as a low noise amplifier. The AT-42035 bipolar transistor is fabricated using Avago’s 10 GHz f T Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, self-alignment techniques, and gold metalization in the fabrication of this device.
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This document was uploaded on 12/29/2011.

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AV02-0299EN - AT-42035 Up to 6 GHz Medium Power Silicon...

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