device_models

device_models - ECE145A/218CA notes M Rodwell copyrighted...

Info iconThis preview shows pages 1–15. Sign up to view the full content.

View Full Document Right Arrow Icon
ECE145A /218CA notes, M. Rodwell, copyrighted ECE145a / 218a: Notes Set 3 device models & evice characteristics: device characteristics: Mark Rodwell University of California, Santa Barbara [email protected] 805-893-3244, 805-893-3262 fax
Background image of page 1

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
ECE145A /218CA notes, M. Rodwell, copyrighted Objectives: Train both seniors graduate students in: --high frequency circuit design fast analog, fast digital, RF/microwave/mm-wave ICs --high frequency transistor design and modeling --145B and 145C are applied / 145A covers the fundamentals pp
Background image of page 2
ECE145A /218CA notes, M. Rodwell, copyrighted ctive Devices: Active Devices: ipolar Transistors Bipolar Transistors
Background image of page 3

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
ECE145A /218CA notes, M. Rodwell, copyrighted HBT Physical Structure
Background image of page 4
ECE145A /218CA notes, M. Rodwell, copyrighted Physical structure, symbolic drawing lar to perpendicu Length Stripe Device E L = emitter b,cont W e W eb W base contact base contact EB grade BC grade collector N+ sub collector N- drift collector collector contact semi-insulating InP substrate c T under W b T c W
Background image of page 5

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
ECE145A /218CA notes, M. Rodwell, copyrighted Bipolar Transistor DC-IV Characteristics
Background image of page 6
ECE145A /218CA notes, M. Rodwell, copyrighted Bipolar Transistor: DC characteristics: common-emitter V ce,sat 15 20 m 2 10 -4 10 -2 (A) I c 5 10 mA/ μ b c I I β = 10 -8 10 -6 I c , I b ( I b 0 01234 10 -12 10 -10 00 . 2 50 . . 7 51 V ce V br,ceo V be (V)
Background image of page 7

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
ECE145A /218CA notes, M. Rodwell, copyrighted Bipolar Transistor: Carrier Transit Times
Background image of page 8
ECE145A /218CA notes, M. Rodwell, copyrighted Base resistance & collector-base capacitance drawing lar to perpendicu Length Stripe Device E L = 12 1 1 2 emitter under spreading contact under spreading rm contact te _ _ , sheet base E sheet base contact b nt contact bb bb W W R R + + + + ρ 6 tor semiconduc , e c cb E E cont b E L W C W ε 2008 Feb. IEEE Proc. 2001, Nov. EDL IEEE Rodwell (see class of scope beyond Details and into of splitting d distribute are and cbi cbx cb cb bb c C C C C R T
Background image of page 9

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
ECE145A /218CA notes, M. Rodwell, copyrighted HBT hybrid-Pi equivalent-circuit model C cbx ) exp( c mo m j g g ωτ = C cbi R bb BC R c e g R / β = c b f τ + τ = τ R be V g m V e -j c m be E R ex C je C be,diff =g m τ f The delay associated with the gm element is essential if common-base input impedance is to be modeled correctly at high frequencies.
Background image of page 10
ECE145A /218CA notes, M. Rodwell, copyrighted Bipolar Transistor T-model C cbx C cbi () ωτ ωτ + α ω α exp 1 1 ) ( 0 c b j j C R bb R cb α(ω)∗ I’ e ωτ + ωτ + α 1 1 1 1 1 0 c b j j V be B R ce I’ e τ + τ ω + α ) ( 1 0 b b j R ex C be,depl r e =1/g m E The approximations above, if taken to first order in produce the hybrid pi model. pp , ω ,p y p The T model is more convenient for common-base amplifier analysis.
Background image of page 11

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
ECE145A /218CA notes, M. Rodwell, copyrighted ctive Devices: Active Devices: Field-Effect Transistors in General
Background image of page 12
ECE145A /218CA notes, M. Rodwell, copyrighted FETs: Basic Operation C / ~ D A C s ε ch d / where / electron g d v L Q I = = τ gs ds ch d gs gs V C V C Q δ + = / and / where ch d gd gs m ds ds gs m d C G C g V G V g I = = + =
Background image of page 13

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
ECE145A /218CA notes, M. Rodwell, copyrighted
Background image of page 14
Image of page 15
This is the end of the preview. Sign up to access the rest of the document.

This note was uploaded on 12/29/2011 for the course ECE 594A taught by Professor Rodwell during the Fall '09 term at UCSB.

Page1 / 56

device_models - ECE145A/218CA notes M Rodwell copyrighted...

This preview shows document pages 1 - 15. Sign up to view the full document.

View Full Document Right Arrow Icon
Ask a homework question - tutors are online