noise_notes_set9_new

noise_notes_set9_new - ECE594I notes, M. Rodwell,...

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ECE594I notes, M. Rodwell, copyrighted ECE594I Notes set 9: Bipolar Transistor Noise Mark Rodwell University of California, Santa Barbara rodwell@ece.ucsb.edu 805-893-3244, 805-893-3262 fax
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ECE594I notes, M. Rodwell, copyrighted References and Citations: Devices State - Solid in Noise : Ziel der Van Physics Thermal : Kroemer and Kittel : Citations / Sources g. ngineeri ns ommunicat f rinciple cobs ozencraft ory) (introduct s Principle Signal Random Variables, Random ty, Probabili : Peebles Z. Peyton ive) comprehens (hard, Variables Random and ity Probabil : Papoulis 982 rca tanford ellman artin otes cture robabilit 1982 circa Stanford, Cover, Thomas : notes lecture theory n Informatio Design c Electroni Noise Low : er Motchenbak ng. Engineeri ions Communicat of s Principle : Jacobs & Wozencraft d f t d circuits. in Noise : Notes ns Applicatio tor Linear Semiconduc National 1982 circa Stanford, Hellman, Martin : notes lecture y Probabilit design) receiver (optical Personik & Smith noise), (device by Fukui Papers Kroemer and Kittel Peebles, Jacobs, & Wozencraft Ziel, der Van study. for references Suggested Theory n Informatio of Elements : Williams and Cover ) (! Notes App. Semi. National
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ECE594I notes, M. Rodwell, copyrighted Bipolar Transistor AC Characteristics ) 1 ( ) 0 ( ) 0 ( ' then are ions concentrat carrier minority base The . / and / Assume / / = = >> >> kT qV o kT qV o o cb be e n e n n n n q kT V q kT V be be 0 ) 1 ( ) ( ' / = po kT qV po b po po po n e n W n cb
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ECE594I notes, M. Rodwell, copyrighted Bipolar Transistor AC Characteristics 0 ' ' / 2 / 2 / 2 / : model diffusion carrier - minority Apply the 2 2 / 1 1 = = = = = kT qV po n b b b n V e n n V qAD W R qAW C qAW G be ' 2 ~ ' 2 ~ 1 1 1 1 = = n I b I A D qn q S A W qn q S GR GR 2 b R W τ
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ECE594I notes, M. Rodwell, copyrighted Bipolar Transistor AC Characteristics regions. depletion collector - base and base - emitter the crossing currents * particle * electron the are ~ and ~ that Note E C I I currents. collector and emitter total the , and from distinct are These E C I I time. transit and e capacitanc both from arise currents nt displaceme the where regions, depletion the in currents nt displaceme from arises distintion The
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ECE594I notes, M. Rodwell, copyrighted BJT Characteristics: Space Charge Transit Times ith pacitor f lates etween velocit oving ectron ith by the done work the to ) ( field electric the it through moving by electron the on done work the equating , voltage bias and separation with capacitor a of plates between y at velocit moving electron an With 2 dx x q V d v x DC E find we , ) ( circuit external 2 1 1 dt t I V t t DC x = s. other time at 0 plates the between moving is electron the when / ) ( d qv t I shown as thus is circuit external the in ) ( current The t I . 2 / is (centroid) delay mean its while , / is pulse current this of width The v D v D c = τ me. transit ti collector the is this layer, depletion collector For the
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ECE594I notes, M. Rodwell, copyrighted BJT Characteristics: Space Charge Transit Times xp( T V 0 ) / exp( = kT qV n n c o ) / exp( 1 kT qV n n be po = 2 bc po f ges the d ns ncentrat rrier
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noise_notes_set9_new - ECE594I notes, M. Rodwell,...

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