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UNIVERSITY OF CALIFORNIA SANTA BARBARA DEPARTMENT OF CHEMICAL ENGINEERING CHE 142 and ChE 242: Microelectronics Processing Spring 2003 Homework # 3 (Due April 30, 2003) 1) A cassette of twenty five 300 mm diameter wafers are loaded into an oxidation furnace. The oxidation will be carried out at atmospheric pressure and 1000 o C in dry oxygen. Calculate the minimum flow rate of O 2 into the furnace in standard cm 3 /min. Is this the flow rate you would use? Why or Why not? 2) Assume that we have an oxidation reactor in the unit operations lab and you will write up a lab procedure before conducting the experiments. Assume that you have an instrument that allows you to measure the oxide thickness. The furnace is made to process 150 mm diameter wafers (a) Describe clearly the series of experiments and the data analysis you would do to determine the oxidation rate parameters (linear and parabolic rate constants and their respective activation energies for (110) Si. Specifically under what conditions would you perform the experiments and how would you analyze the data. (b) Estimate how long it will take you to collect this data. (Time is a problem isn’t it?) (c) Comment on what you expect these parameters to be, based on data published for the other Si
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This note was uploaded on 12/29/2011 for the course CHE 142 taught by Professor Ceweb during the Fall '09 term at UCSB.

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