exam3_fall2009

# exam3_fall2009 - Prof Sam Palermo ECEN 325 Exam#3 December...

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Unformatted text preview: Prof. Sam Palermo ECEN 325 Exam #3 December 3, 2009 Texas A&M University Department of Electrical and Computer Engineering ECEN 325 — Electronics Fall 2009 Exam #3 Instructor: Sam Palermo 0 Please write your name in the space provided below 0 Please verify that there are 4 pages in your exam 0 You may use 9g double-sided page of notes and equations for the exam 0 Good Luck! 1 30 Prof. Sam Palermo ECEN 325 Exam #3 December 3, 2009 Problem 1 (30 points) For all the circuits below, use the following NMOS parameters KPN=unCox=lOOuA/V2, VTN=1V, XN=OV“ and the following PMOS parameters KPp=upC0x=30pAfV2, VTp=-lV, x.)=0V“1 For the following two circuits calculate i. ID with W/L=10/l. (10 points) ii. The maximum W/L such that the transistor remains in saturation (10 points) b) “N Ear SM ': Wall/6541“, (if 5"”: V50 zl/sé-ﬁ/ﬂg/ 10v 1k!) 1—; 3M 3 Z‘ti‘g‘d 90 Z ﬁll/4%): gv4v g L I 1 [1 3411.5 10 I09” gk£%[%s“VTﬁ) I [In w «5 r a) rm : W Lam/7a; \ 2 I”: ~21 (Zoﬂé’zX/oﬂzm = / l = -: 2 “- A lg: “ 4’SMA : I, 0 (34+ CM/ec+) /_ a i 7 A /§a{ «Lo/7557') Far 3qu Mom IO : 7M4 I—a/ 544+ Max 193 e M w me 25 “7M , “,4 w 2%..» i i 4' ﬁ it t __, _ z z Max 1, ” K/Z/[%,J/:/‘ icbea(?t/) < L K€g{l/gé "/Vrr"/) 1D(w/L=10/1)= LES/7,4 ID (W/L=10/1) = r a 45M” W m»— Sat. Max W/L= 3/, 4 Sat. Max W/L= 991%? {BL/>2 c) For the following circuit ﬁnd the values for 192, 1133, and VOUT. Assume all transistors are 0 eratin in saturation. (10 oints) p g 10v p F/ M (“WM Mf/‘r’o/ (Ml/ML) O < 10/!) / ﬂ 02. = 2M (2%) “ "I P 2’ i It ( 1/)2 Mgllll/as *Vm) ~ 2(1091/y900) Z =5 4.344A » ,- - , —. m4 =- 3, SmA _ 10; = 104 ~ :5; - 45'” 1w MA v A ~_ 2 a”? ﬁ ﬁ _,, - IDS: Prof. Sam Palermo ECEN 325 Exam #3 December 3, 2009 Problem 2 (35 points) Assume for problem 2 that the NMOS transistors are all operating in saturation and have KPN=ancox=looiiA/V2, VTN=1V, xN=0V'1 a) Calculate the DC values for 19, V0, V3 and the AC small-signal gml. (10 points) 10V Vo l RL%500 10 100 T M2 M3 ‘1“ Rom VS: Vac-(V00 ‘l VTN) ‘—’-' {U' yum *IV) ID: 204/} 109 r a (10:0) 2 4. 2 7V Vo= 6 V (ﬁn/h : W = 72(zogaAAa)(L¢¥2)(zoa/4) vs: 4.37\/ :— 63.2mA/V gm]: 63.2”??? b) Sketch the small-signal model ofthe circuit. Assume that the capacitors act as AC shorts and A only draw the essential transistor(s). (10 points) 7; we)" 0 TYLf/“é‘il/ 0 / c) Calculate small signal gain AV=Vo/Vi, input resistance Rm, output resistance Rout. (15 points) K’L > Av= 0,76% 7 Rm: 24am, A 3 1’53 3M4? # @gzmﬁi 52220 : 6y _ ___V V ’ Ham‘s? M5212W/m) 0’7 'V R“ "23% / 3 ‘65s 3 9 = Wﬂ‘W’vaW ﬂoat 52M; " sir/a Prof. Sam Palermo ECEN 325 Exam #3 December 3, 2009 Problem 3 (35 points) Assume for problem 3 that the transistors are all operating in saturation and have KPN=unC0x=100pA/V2, VTN=1V, xN=0Vl KPp=ppCOX=3OuA/V2, VTp=-1V, xp=ovl a) Calculate the DC values Vm, VGI, V51 and AC small-signal values gml and gmz. (10 points) (Wm >(mvv Ev b) Sketch the Circuit’s small—signal model. Assume the capacitors act as AC shorts. (10 points) 6! A ’72-‘74; " W3 14 , I 5 z 0) Calculate small signal gain AV=V0/Vj, input resistance Rm, output resistance Rom. (15 points) W; 3 ‘5)»7,V7(§Lm) Av=-§./6% A, :- : .3”; 7*; (@024). : .gl/Q Z Rm: Zsoxm/ I (a’m' W5 (1%); Rate Lack/v let-:KESS’OOk/S‘DOK 4 “:L:’L*‘~ (A Q at”; 0,77% 8 /A ...
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exam3_fall2009 - Prof Sam Palermo ECEN 325 Exam#3 December...

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