mosfet_1 - ECEN 325 Electronics MOS Field-Effect...

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Unformatted text preview: ECEN 325 Electronics MOS Field-Effect Transistors Dr. Aydın ˙ Ilker Kar¸ sılayan Texas A&M University Department of Electrical and Computer Engineering NMOS Physical Structure NMOS Physical Structure p- Drain (D) L W Body (B) n+ n+ Polysilicon M e t a l M e t a l Source (S) Gate (G) ECEN 325 Electronics - Aydın ˙ I. Kar¸ sılayan - MOS Field-Effect Transistors 1 CMOS Physical Structure CMOS Physical Structure Cross-section PMOS NMOS S G D D G S p- n-well n+ 2 p+ p+ 2 n+ 2 SiO SiO SiO ECEN 325 Electronics - Aydın ˙ I. Kar¸ sılayan - MOS Field-Effect Transistors 2 TAMU-ELEN-325 J. Silva-Martinez- 1 - & ¡ & ¢ & ¡ & ¢ & ¡ & ¢ & ¡ & ¢ £ ¤ ¥ ¦ ¤ ¥ ¦ ¤ ¥ ¦ ¤ ¥ ¦ Jose Silva-Martinez Texas A&M University Department of Electrical Engineering Analog and Mixed Center College Station, TX [email protected] TAMU-ELEN-325 J. Silva-Martinez- 2 - P-MOS Transistor D S B G P-type transistor N-Well P+ Diffusion Gate Drain Polysilicon Bulk Source substrate P+ P+ S G D P-channel N N+ B Thick oxide Thin oxide Polysilicon (heavily doped) Basic elements: Diffusions + Oxidations + Polysilicon DIODE TAMU-ELEN-325...
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mosfet_1 - ECEN 325 Electronics MOS Field-Effect...

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