APhEE183HW4

APhEE183HW4 - California Institute of Technology Applied...

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1 California Institute of Technology Applied Physics APh/EE 183 Physics of Semiconductors and Semiconductor Devices Spring 2009 Homework #4 Issued: 4/21/09 Due Date: Monday 4/27/09 Suggested Reading for Problems 1 and 2: Class notes #5 and #6, Shur Chapter 1, sec. 1.5-1.7 Problems: Suggested Reading for Problems 3 and 4: Class notes #7 and #8; Sze: Chapter 2, section 2.1-2.3, Chapter 5, section 5.2 Problems: 1. Recombination through a Defect Level in High Level Injection: A homogeneous sample of silicon with a single defect trap level at E T = E i having electron and hole capture cross sections σ n and p , respectively, and having n o = 10 8 p o is uniformly illuminated with light to achieve an excess carrier concentration of 10 n o (which constitutes high level injection). (a) Using the kinetics appropriate to recombination through a single deep level, calculate the decay of excess carrier concentration after the light is turned off at time t = 0.
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This note was uploaded on 01/04/2012 for the course APH 183b taught by Professor List during the Fall '09 term at Caltech.

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APhEE183HW4 - California Institute of Technology Applied...

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