Complement1APh183

Complement1APh183 - Dislocation Density Effects on Internal...

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APh 183: Physics of Semiconductors APh 183: Physics of Semiconductors and Semiconductor Devices and Semiconductor Devices 104 Watson 104 Watson TEM cross-section of a 10nm transistor Instructor: H.A. Atwater Instructor: H.A. Atwater Complement #1: Complement #1: Gallium Nitride and III-Nitride Gallium Nitride and III-Nitride Semiconductors Semiconductors
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III-Nitride Semiconductors
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Evolution of Luminous Efficiency by Technology
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GaN Bandstructure (Wurtzite Phase)
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GaN Mobility and Scattering
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GaN: Hydrogen Passivation of Dopants
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GaN Properties
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GaN Field Effect Transistors
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GaN as a Power Device Material
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GaN: Typical Blue LED Structure
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GaN/Sapphire Growth
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Unformatted text preview: Dislocation Density Effects on Internal Quantum Efficiency and Device Lifetime GaN Defect Reduction via Lateral Epitaxial Growth Light Extraction Critically Dependent on Layer Thickness Control Photonic Crystals Improve Light Emission Directivity LED Spectral Luminous Efficiency vs. Eye Response White Light Generation via Phosphor Down-Conversion and RGB Color Mixing CdSe Quantum Dot Phosphors for White LEDs Examples of LED Packaging Schemes GaN LED Package Device Structure for UV LED Thin Metal Contact Important to UV LEDs LED Applications University of Strathclyde Institute of Photonics Lighting Traffic Signals Displays HBLED Market...
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This note was uploaded on 01/04/2012 for the course APH 183b taught by Professor List during the Fall '09 term at Caltech.

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Complement1APh183 - Dislocation Density Effects on Internal...

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