# HW2 - EECS413 Fall 2011 HW 2 Due 4PM Tuesday 10/4 Turn in...

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Unformatted text preview: EECS413 Fall 2011 HW 2 Due 4PM Tuesday, 10/4 Turn in to Fran Doman in 2417 EECS 1. Assume M1, M2, and M3 are in saturation. Assume gds << gm. a. Draw the small signal model. M3 Vout1 b. Which output is the inverting output? Which is the non‐ inverting output? Vin M2 Vout2 M1 c. Find an expression for the small signal gain from the input to the non‐inverting output, Av=voutx/vin. 2. Refer to the gain‐boosted amplifier to the right. a. Draw the small signal model. Vout M2 ‐A b. Solve for Gm, Rout, and Av in terms of the small signal parameters and A. M1 Vin Vb + ‐ 3. Q1 is operating in the forward active region. Use the following parameters: VA=26V, β=100, IC=26mA, rb=0 a. Write an expression for the small‐signal low‐ frequency gain in terms of VA and VT. b. What is value of the small signal low‐frequency gain? c. For the same amplifier now assume rb= 100KΩ. Sketch the small signal model. d. Write an expression for the small‐signal low‐ frequency gain of the amplifier and also give a numerical value. 4. The figure to the right shows a folded cascode amplifier. Assume that all of the transistors are biased in saturation. Derive an expression for the small‐signal gain. Vb1 M2 Vb2 Vin M1 M3 RL Vout ...
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## This note was uploaded on 01/12/2012 for the course EECS 413 taught by Professor Staff during the Spring '08 term at University of Michigan.

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