MT1_2010_sol - 2W3 W? M g m E. 33% m m m...

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Unformatted text preview: 2W3 W? M g m E. 33% m m m éfifiééfifii E Egg? $5 giggiag 3% Honor Pledge (to be Signed a: the end thhe exam) I have neither given not received unauthorized aid on ibis examination, nor have I cancealed any violations 0f the Honor Code. Signed: {Eggfigéiém i i??? Assume k4), 12,20 (base parasitic resistance). Q1 is aperafing in forward active region. Write an expression for the low—frequency smaflvsignal gain (Le. vgmiivm) in terms 0f the transistor small—signal parameters (i .6. gm, gmb Etc). m Wigfii %3~ Affii PU »§ 4 m .3 m M n % \ x M y. m‘ f3?“ » m? W {W mmw gm 3 “3“”; Eu: W 1% k % ,, %«w § E Do NOT ignore channel length modulation. Assume MI and W are in saturation. Write an expression for the iow—fiequency smafl~3ig11al gain in terms of the transistor smaiI—signal parameters. «9 E, ’gm "Mix _ “W . 2 § ma) 2; 3 V2??? £22 fifiififiéfiifié‘ as? gaig {éimfigfiéfififi E? im% a g}? i 21%;: ggfiflfi fiifi yaésgg a}? gag :3 lgfimfi iififié: é‘égzmfiiizsfi fig} gimg ééggééafié $3? {13%;}??? QK 3 z, , 3%“? m A: 2 1‘ «, 'x ' w” ,«w ‘0: ‘ , Ejfig ” if; iiéfié :1“? V171? : ~1 V Ignore channel length modulation, What is the largest value (Le. a numerical value) of small—signal low~frequency gain, if the Value of R1 is optimized to gnaximize gain. $1M; ,, m 3% J 3%”1‘” g??? Km ifgflféfig M U1 Q1 is operating in the forward actixze region. VA226V, £32100, IfBépLA, {5:0 Write an expression for the small-signal low—frequency gain in {arms of VA and VT Q flma aim mfi'jmil :éf“ MW" ’ M :2 W- :52 W V}; “’QL « :%@@ 2g; gié E? g i i ‘1: Write an expressian for {he smafinsigna} inw—fiequency gain 01" the ampfifiar and 3139 give a numerical value. $52 gm, mew “WWW-“m ifiifi? gigagémé Eéfigfii fifififiififififia M1 35% $52 23.1% k: samfifiag Assume pug“ Viz/L; : 31,? ’9; WliLg Also assume V13; = - VT? W113: is the quiescent (is: 9C) value of Vang? (Hint: This is not smafl signal analysis) For the same candifions as in part (a) new mite an expressian far the iow~frequency small-signal gain of the circuit shown in terms of the small signal MOS pammeters (Le. gm gm, etc.) a; g E 2% 5’3 2 « a» 5}?“ E ( gm WM? A i % WM m 1G ignare fimei iengfia 3196113215013, Assume Mi and M2 are operafing in sahxmtion. Sketch {he law—frequency sgall-sigaal modfil (Le. 16% frequeficy so no Wham). 11 ...
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MT1_2010_sol - 2W3 W? M g m E. 33% m m m...

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