mt_142_fa2011 - work. We Frst resonate the capacitor. The...

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University of California, Berkeley Fall 2011 EECS 142 Prof. A. Niknejad Midterm 1. (a) Calculate the Y-parameter for a common gate ampliFer. The in- ductor at the output provides bias and also resonates with C db at frequency f o . Assuming in this technology C db = C gs and C gd =0 , write Y-parameter at frequency f o using g m , C gs , f o and inductor quality factor Q L . Solution: Y 11 = g m + sC gs Y 21 = - g m Y 12 =0 Y 22 = 2 f o C gs Q L + Q - 1 L @ f o (1)
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(b) Assume your transistor is biased with 1mA current at V =200 mV . The f T at this bias point is 100GHz. Design a matching network to match your input impedance to 50 at 10 GHz . What is the maximum achievable power gain for your ampliFer if inductor Q is 10? Solution: g m = 2 I V gs - V T =10 mS (2) ! C gs = ! ! T g m =1 mS (3) We can use shunt-inductor-series-capacitor to do the matching net-
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Unformatted text preview: work. We Frst resonate the capacitor. The inductance needed is ! L res = 1 ! C gs = 1 k ( 4 ) The impedance transformation Q match = p 2-1 = 1 therefore the inductance to transform the impedance is ! L match = 1 Q match g m = 100 (5) The series capacitance is calculated as ! C match = g m (1 + Q 2 match ) Q match = 20 mS (6) The total inductance and capacitance needed is L total = 100 // 1 k 2 10 G = 1 . 45 nH (7) C total = 20 mS 2 10 G = 318 fF (8) The Maximum gain is G max = | Y 21 | 2 4 Re ( Y 11 ) Re ( Y 22 ) = ( Q L + Q-1 L ) g m 4 ! C gs = 25 . 25 (9) 2...
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This note was uploaded on 01/12/2012 for the course EECS 142 taught by Professor Ee142 during the Fall '04 term at University of California, Berkeley.

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mt_142_fa2011 - work. We Frst resonate the capacitor. The...

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