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# hw2 - 2.14 For intrinsic silicon σ = q μ n n i μ p n i...

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Unformatted text preview: 2.14 For intrinsic silicon, σ = q μ n n i + μ p n i ( 29 = qn i μ n + μ p ( 29 σ ≥ 1000 Ω - cm ( 29- 1 for a conductor n i ≥ σ q μ n + μ p ( 29 = 1000 Ω - cm ( 29- 1 1.602 x 10- 19 C 100 + 50 ( 29 cm 2 v- sec = 4.16 x 10 19 cm 3 n i 2 = 1.73 x 10 39 cm 6 = BT 3 exp- E G kT with B = 1.08 x 10 31 K- 3 cm- 6 , k = 8.62x10-5 eV/K and E G = 1.12 eV This is a transcendental equation and must be solved numerically by iteration. Using the HP solver routine or a spread sheet yields T = 2701 K. Note that this temperature is far above the melting temperature of silicon. 2.23 N A N D : N A- N D = 10 15- 10 14 = 9 x 10 14 /cm 3 If we assume N A- N D 2 n i = 10 14 / cm 3 : p = N A- N D = 9 x 10 14 /cm 3 | n = n i 2 p = 2510 26 9 x 10 14 = 2 . 78 x 10 12 /cm 3 If we use Eq. 2.12 : p = 9 x 10 14 ± 9 x 10 14 ( 29 2 + 4 5 x 10 13 ( 29 2 2 = 9 . 03 x 10 14 and n = 2 . 77 x 10 12 /cm 3 . The answers are essentially the same....
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hw2 - 2.14 For intrinsic silicon σ = q μ n n i μ p n i...

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