ECE_220A_Lecture_19_Nov_29_2011_slides

ECE_220A_Lecture_19_Nov_29_2011_slides - Atomic Layer...

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Atomic Layer Deposition ALD
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Atomic Layer Epitaxy (ALE), Atomic Layer Deposition (ALD) Tuomo Suntola and Jaakko Hyvärinen, Ann. Rev. Mater. Sci. 15 , 177 (1985)
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Tuomo Suntola and Jaakko Hyvärinen, Ann. Rev. Mater. Sci. 15 , 177 (1985) First demonstrated in 1974, US Patent #4058430 (1977) Atomic Layer Deposition
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Tuomo Suntola and Jaakko Hyvärinen, Ann. Rev. Mater. Sci. 15 , 177 (1985)
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Tuomo Suntola and Jaakko Hyvärinen, Ann. Rev. Mater. Sci. 15 , 177 (1985)
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H. Kim, JVSTB, 21 , 2231 (2003)
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H. Kim, JVSTB, 21 , 2231 (2003)
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Plasma Enhanced ALD H. Kim, JVSTB, 21 , 2231 (2003)
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H. Kim, JVSTB, 21 , 2231 (2003)
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H. Kim, JVSTB, 21 , 2231 (2003)
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H. Kim, JVSTB, 21 , 2231 (2003)
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Oxides ALD Al 2 O 3 Trimethylaluminium — Al(CH 3 ) 3 + H 2 O
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Nickel(II) acetylacetonate, Ni(acac) 2 C 10 H 14 NiO 4 or C 30 H 42 Ni 3 O 12 Ni(C 5 H 7 O 2 ) 2
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Ta(N(C 2 H 5 ) 2 ) 3 NC(CH 3 ) 3 Tris(diethylamino)(tert-butylimido)tantalum Tetrakis(diethylamino)titanium - Ti(NC 4 H 10 ) 4 Tetrakis(dimethylamino)titanium - Ti(NC 2 H 6 ) 4 http://www.safcglobal.com/safc-hitech/en-us/home/overview/products.html
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Bis(isopropoxy)bis(2,2,6,6-tetramethylheptane-3,5-dionato)titanium - Ti(OCH(CH 3 ) 2 ) 2 (C 11 H 19 O 2 ) 2 Tetrakis(tert-butoxy)titanium - Ti(OC4H9)4
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H. Kim, JVSTB, 21 , 2231 (2003)
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H. Kim, JVSTB, 21 , 2231 (2003)
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S.A. Campbell “Fabrication Engineering at the Micro- and Nanoscale”
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Other Processes and Novel Device Structures
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H. Kim, JVSTB, 21 , 2231 (2003)
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Gossmann et al., IEEE Trans. Nanotechnology, 2 , 285 (2003) FinFET device Gate wraps around the channel How can you make it?
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Kedzierski et al., IEEE Trans ED,
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This note was uploaded on 01/16/2012 for the course ECE 220a taught by Professor Staff during the Spring '08 term at UCSB.

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ECE_220A_Lecture_19_Nov_29_2011_slides - Atomic Layer...

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