ECE_220A_Lecture-15_Nov_10_2011_slides

ECE_220A_Lecture-15_Nov_10_2011_slides - Figure 11.8...

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Unformatted text preview: Figure 11.8 Chemical mechanical polishing of the surface of a partially processed wafer done to achieve a high degree of global planarization. Fabrication Engineering at the Micro- and Nanoscale Campbell Copyright © 2009 by Oxford University Press, Inc. Chemical Mechanical Polishing (CMP) Very good for planarization Key components - Slurry Polishing Pad (proprietary) typically etching multicomponents Application: Planarization of interconnect metallization, dielectrics Fabrication Engineering at the Micro- and Nanoscale Campbell Copyright © 2009 by Oxford University Press, Inc. Example of CMP Back to etching features Figure 11.1 Typical isotropic etch process showing the etch bias. Fabrication Engineering at the Micro- and Nanoscale Campbell Copyright © 2009 by Oxford University Press, Inc. Would like anisotropic etching - how do you get it? Dry Processing or Plasma Processing Plasma Reactive Ion Etching (RIE) Ion Milling Why use dry processing? What does a plasma do? Reactive Ion Etching: parallel plate reactor Talk about how plasma forms What is a plasma? Ions electrons excited ions excited neutral atoms Parameters to control: rf-Power Bias-Voltage Current Pressure Temperature Gas composition Physical Etch Ions, electrons, photons • anisotropy control • insensitivity to surface, crystal orientation Chemical Etch Reactive gas • materials selectivity • volatile etch products • low damage Need to achieve the right balance between physical and chemical etching Plasma Etching Physical Etch...
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This note was uploaded on 01/16/2012 for the course ECE 220a taught by Professor Staff during the Spring '08 term at UCSB.

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ECE_220A_Lecture-15_Nov_10_2011_slides - Figure 11.8...

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