EE 121b - 5 - BJT 2

EE 121b - 5 - BJT 2 - Slide 5-1 EE 121B – Chi On Chui EE...

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Unformatted text preview: Slide 5-1 EE 121B – Chi On Chui EE 121B Principles of Semiconductor Device Design Bipolar Junction Transistors - II Professor Chi On Chui Electrical Engineering Department University of California, Los Angeles Email: [email protected] Slide 5-2 EE 121B – Chi On Chui Outline • Generalized Biasing and Circuit Configurations • Switching (Ch. 7) Slide 5-3 EE 121B – Chi On Chui PNP BJT Modes of Operation V EB V CB p + ( E ) n ( B ) p ( C ) n pE p nB n pC p + ( E ) n ( B ) p ( C ) p nB n pC n pE p + ( E ) n ( B ) p ( C ) n pE p nB n pC p + ( E ) n ( B ) p ( C ) p nB n pC n pE Normal Active Reverse Active Cutoff Saturation Slide 5-4 EE 121B – Chi On Chui Coupled-Diode Model for Generalized Biasing • The current equations can be considered as linear superpositions of injection by each junction for the symmetrical transistor • When the C B junction is forward biased, ∆ p C is not zero ( ) ( ) 1 B 1 A ∆ ∆ − − − = − = + = kT qV kT qV C E EI EN E CB EB e e p b p a I I I ( ) ( ) 1 A 1 B ∆ ∆ − − − = − = + = kT qV kT qV C E CI CN C CB EB e e p a p b I I I I for Inverted Mode N for Normal Mode Slide 5-5 EE 121B – Chi On Chui Diode Connected Transistor ( ) 1 V ∆ − = = ⇒ = kT qV ES EN CB C EB e I I V p • The emitter current when V C B = 0 is simply the E B junction diode current p + ( E ) n ( B ) p ( C ) I E I C I B A – V CB + + V EB – V EB = 0 Inverted Mode ( ) 1 V ∆ − − = = ⇒ = kT qV CS CI EB E CB e I I V p V CB = 0 Normal Mode p + ( E...
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EE 121b - 5 - BJT 2 - Slide 5-1 EE 121B – Chi On Chui EE...

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