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EE 121b - HW 1

# EE 121b - HW 1 - EE 121B Winter 2009 Prof Chui EE 121B...

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EE 121B / Winter 2009 / Prof. Chui Homework #01, p.1 EE 121B Principles of Semiconductor Device Design Winter 2009 Homework #01 (Due Date: Jan 22 nd , 2009, 12 pm in Boelter 6731) Physical constants: I. Electronic charge = 1.60 × 10 -19 C II. Vacuum Permittivity = 8.85 × 10 -14 F/cm III. Boltzmann constant = 8.62 × 10 -5 eV/K IV. Planck constant = 6.63 × 10 -34 J-s V. Electron mass in vacuum = 9.10 × 10 -31 kg General assumptions in all problems unless specifically stated otherwise: I. Temperature = 300 K Semiconductor = Silicon a. Intrinsic carrier concentration 1 × 10 10 cm -3 b. Permittivity = 11.8 Questions: 1) During the lectures, you have been told that the intrinsic level E i is not exactly at the middle of the bandgap for most semiconductors. Use Si as an example, a) Qualitatively explain the reason b) Calculate the E i position with respect to the valence band maximum E v P ( N a ) N ( N d ) x n 0 + W P W N W w n x p 0 w p ( x p 0 ) ( x n 0 ) Figure 1 P-region N-region Area (cm 2 ) 10 -4 10 -4 Width, W P or W N ( µ m) 50 2 Doping (cm -3 ) 10 18 10 15 Minority Carrier Lifetime (s) 10 -7 10 -6

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EE 121b - HW 1 - EE 121B Winter 2009 Prof Chui EE 121B...

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