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Unformatted text preview: collector-base depletion regions 2) When a 0.5 V forward bias and 10.0 V reverse bias are respectively applied across the emitter-base and collector-base junctions, a) Plot the excess carrier density in the base region b) Calculate: i) The emitter injection efficiency, ii) The base transport factor, iii) The common base current gain, and iv) The common emitter current gain c) Repeat a) and b) if the minority carrier lifetime in the base becomes 10-9 s; Identify and explain any difference(s) observed N ( N dE ) P ( N aB ) W Base N ( N dc ) W b Figure 1 Emitter Base Collector Width, W Base ( µ m) 3 Doping (cm-3 ) 5 × 10 18 10 16 10 15 Minority Carrier Lifetime (s) 5 × 10-8 2.5 × 10-7 2 × 10-6 Minority Carrier Mobility (cm 2 /V-s) 130 600 800...
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This note was uploaded on 01/17/2012 for the course EE EE 110 taught by Professor Gupta during the Spring '09 term at UCLA.
- Spring '09