EE 121b - HW 3

EE 121b - HW 3 - EE 121B / Winter 2009 / Prof. Chui EE 121B...

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EE 121B / Winter 2009 / Prof. Chui Homework #03, p.1 EE 121B Principles of Semiconductor Device Design Winter 2009 Homework #03 (Due Date: Fed 6 th , 2009, 12 pm in Boelter 6731) Apply the same set of physical constants and general assumptions as in Homework #01. Questions: 1) By appropriately combining and/or rearranging the Ebers-Moll equations for an NPN BJT, a) Perform the algebraic manipulations necessary to derive the equation for: i) The common emitter configuration input [i.e. I B ( V BE , V CE )], and ii) The common emitter configuration output [i.e. I C ( V CE , I B )] b) Sketch: i) The input characteristics ( I B vs. V BE with varying V CE ), and ii) The output characteristics ( I C vs. V CE with varying I B ) 2) The switching NPN BJT shown in Fig. 1 has an emitter injection efficiency of unity and a base transit time of 1 ns. The device is used as a saturated inverter like the one shown in Slide 5-13 with a load resistor of 5 k and the collector supply voltage of 10 V. a)
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This note was uploaded on 01/17/2012 for the course EE EE 110 taught by Professor Gupta during the Spring '09 term at UCLA.

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EE 121b - HW 3 - EE 121B / Winter 2009 / Prof. Chui EE 121B...

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