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Unformatted text preview: iii) The threshold voltage b) Repeat a) if the p + silicon gate electrode is replace with n + silicon; Identify and comment on any difference(s) observed 2) For the same capacitor described in 1)-a) with a positive oxide trapped charge density of 10 12 cm-2 located at the oxide/substrate interface, a) Calculate the threshold voltage b) Sketch as a function of position across the MOS structure at strong inversion: i) The electric field, and ii) The potential c) Sketch the low-frequency capacitance-voltage characteristics from accumulation to inversion with and without the oxide trapped charges d) Repeat c) on the same graph if the oxide trapped charges are negative instead of positive...
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This note was uploaded on 01/17/2012 for the course EE EE 110 taught by Professor Gupta during the Spring '09 term at UCLA.
- Spring '09