EE 121b - HW 5

EE 121b - HW 5 - EE 121B / Winter 2009 / Prof. Chui EE 121B...

Info iconThis preview shows pages 1–2. Sign up to view the full content.

View Full Document Right Arrow Icon
EE 121B / Winter 2009 / Prof. Chui Homework #05, p.1 EE 121B Principles of Semiconductor Device Design Winter 2009 Homework #05 (Due Date: Mar 11 th , 2009, 12 pm in Boelter 6731) Apply the same set of physical constants as in Homework #01 and the following general assumptions: I. Temperature = 300 K Semiconductor = Silicon a. Intrinsic carrier concentration 1 × 10 10 cm -3 b. Permittivity = 11.8 c. Electron affinity = 4.0 eV d. Energy bandgap = 1.12 eV Insulator = Silicon dioxide a. Permittivity = 3.9 Questions: 1) For a p -channel MOSFET with the x , y , and z coordinates defined in the lecture notes, a) Sketch as a function of position ( x ) vertically across the MOS structure at threshold with V d = 0 V: i) The energy band diagram (showing E c , E v , E i , and E F ), and ii) The charge block diagram b) Sketch the MOSFET cross-section with the inversion layer and depletion region at pinch-off with large V G and V D (show and label all parts of the transistor) c) Derive the following expressions in the thin inversion layer (in terms of terminal
Background image of page 1

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
Image of page 2
This is the end of the preview. Sign up to access the rest of the document.

Page1 / 2

EE 121b - HW 5 - EE 121B / Winter 2009 / Prof. Chui EE 121B...

This preview shows document pages 1 - 2. Sign up to view the full document.

View Full Document Right Arrow Icon
Ask a homework question - tutors are online