20085ee2_1_homework 6_08

20085ee2_1_homework 6_08 - . . . Electrical...

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. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EE2 Physics for Electrical Engineers Homework #6 An n-type silicon sample is doped with phosphorus 3 16 10 cm and with Au 3 15 10 5 × cm . Au is a recombination center with an acceptor level at 0.54 eV below the conduction band edge. The capture cross section of Au for electron is 2 16 10 5 cm n × = σ , for hole is 2 15 10 cm p = . The effective mass for hole in silicon is 0.5m, where m is the free electron mass. Work out Problem I through IV for this sample. I. Find out the majority and minority carrier concentrations at room temperature II. Find out the life time for holes at equilibrium.
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This note was uploaded on 01/24/2012 for the course EE 3 taught by Professor Staff during the Spring '08 term at UCLA.

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