# HW1 - drain = V gate = 5V b) V source = 0V, V substrate =...

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EECS 170D Homework #1 Due in class Tuesday October 16 th , 2007 Diode Parameters: Diode turn-on voltage: .7V Reverse Saturation Current: 10nA Transistor Parameters: k’ = 160 μ A/V 2 V T0 = .55V E c = 1.5 x 10 4 V/cm ν sat = 10 7 cm/sec μ n = 400 cm 2 /V*s C ox = 4 fF/ μ m 2 Diodes #1) The following two circuits are driven by an input source which generates a 1kHz sinusoidal, zero-mean signal with a peak amplitude of 10 Volts. a) Draw the voltage waveforms over two cycles, be sure to include maximum and minimum voltage quantities in your drawings. b) Repeat a) for current coming from the input source. i ) i i ) #2) Sketch an NMOS cross-section (metal, oxide, diffusion) and identify the parasitic diodes. What is the current flowing through each of the diodes if: a) V source = V substrate = 0V, V

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Unformatted text preview: drain = V gate = 5V b) V source = 0V, V substrate = 1V, V drain = V gate = 5V EECS 170D Homework #1 Due in class Tuesday October 16 th , 2007 #3) Determine all node voltages and currents for the given circuit. Transistors #4a) Determine the drain current and output voltage for the following circuit for V in = 0V and V in = 1.8V. Assume a long-channel device (W = 8 μ m, L = .8 μ m). b) Recalculate the bias point for the above circuit at V in = 1.8V including the effects of velocity saturation. Assume a short-channel device (W = 2 μ m, L = .2 μ m). #5) Derive an expression giving V o as a function of V i ,V TH (V o ) and I o . Then ignoring the body effect, what is the nominal value of the level shift (V i – V o )?...
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## This note was uploaded on 01/24/2012 for the course EECS 170d taught by Professor Staff during the Fall '08 term at UC Irvine.

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HW1 - drain = V gate = 5V b) V source = 0V, V substrate =...

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