3220 test #2 fall 2004

3220 test#2 fall - 7 Consider the following circuit with BJT parameters C μ = pF r x = 10 f T = 450 MHz β F = o =100 V f = 0.7 V = 1 and r o =

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Name: _______________________________ EE 3220 Test # 2 SSN: _________________________________ Fall 2004 1.) Explain why the reverse bias pn junction should be modeled as a capacitance. Draw a picture to assist your explanation. 2.) Explain why the input of an FET should be modeled as a capacitance and not an open circuit. Draw a picture to assist your explanation. 3.) Explain how the value of r x plays a significant role in the high frequency breakpoint of a differential amplifier. Use equations or circuits to help explain. 4.) As far as low frequency response, why is emitter bypass capacitor not a preferred solution? 5.) What is the high frequency limit for the Q2N3904 BJT?
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6.) A system function has a constant gain of 5 at DC, a zero at 8 Hz, and poles at 100 Hz, 20 kHz, and 1 MHz. a.) Sketch the magnitude and phase response. b.) What is the midband gain and approximate breakpoint frequencies? c.) Calculate the exact gain at the breakpoint frequencies.
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Unformatted text preview: 7.) Consider the following circuit with BJT parameters: C μ = pF , r x = 10, f T = 450 MHz, β F = o =100 V f = 0.7 V η = 1, and r o = ∞ . V CC = 6 volts V EE = -6 volts R C = 5 k Ω R 1 = 20 k Ω C E = 100 μ F R E = 3.3 k Ω R 2 = 10 k Ω C M = 4 pF R S = 1 k Ω R M = 1 M Ω C S = 2.2 μ F Determine the passband gain and bandwidth for the circuit. 8.) Determine the high frequency time constants in the circuit below and plot the output signal for a square wave input with a frequency of 1 MHz and amplitude of 10 mV peak to peak. BJT parameters: C μ = 2 pF , r x = 10 Ω , f T = 400 MHz, β F = o =100 V f = 0.7 V η = 1, and r o = ∞ . V CC = 5 volts R C = 3.3 k Ω R 2 = 10 k Ω C L = 2 pF R S = 1 k Ω R B = 1 M Ω C S = 10 μ F 9.) Find the dominant high frequency pole of the MOSFET circuit below. MOSFET parameters: C gd = 1 pF, C gs = 7 pF, K = 1 mA/V 2 and V TR = 4 V....
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This note was uploaded on 01/25/2012 for the course EE 3220 taught by Professor Audiffred during the Spring '06 term at LSU.

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3220 test#2 fall - 7 Consider the following circuit with BJT parameters C μ = pF r x = 10 f T = 450 MHz β F = o =100 V f = 0.7 V = 1 and r o =

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