EE2231 Lab9

EE2231 Lab9 - Lab Session #8 Bipolar Transistors Randall...

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Lab Session #8 Bipolar Transistors Randall Robert Purpose: To characterize enhancement and depletion-mode field-effect transistors, and to implement a CMOS inverter. Assembly: For Procedure 1. Connect the circuit in figure 1, measure the voltages at points G (the gate electrode) and D (the drain electrode) as the input voltage is varied from 0 to 5V in ½ volt increments. Then compute the drain current from the voltage drop across the 10K drain resistor using the following formula: I d =(5-V D )/10k. For Procedure 2. Connect the circuit in fig. 2, measure the voltage at the gate electrode and the drain electrode as the input voltage is varied from -5V to 0 in 1/2V steps. Then compute the drain current as before in procedure one. For Procedure 3. Connect the current in fig. 3, measure the voltage as the input is varied from 0 to 5V in 1/2V steps. Procedures: (all figures are on page 6 of this report) 1. After assembling the circuit in figure 1, the following voltages were recorded. V
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This note was uploaded on 01/25/2012 for the course EE 2231 taught by Professor Staff during the Spring '08 term at LSU.

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EE2231 Lab9 - Lab Session #8 Bipolar Transistors Randall...

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