ece546fall11_04

# ece546fall11_04 - ECE ECE 546 VLSI Systems Design Lecture 4...

This preview shows pages 1–10. Sign up to view the full content.

ECE 546 ECE 546 - VLSI Systems Design VLSI Systems Design ecture ecture : Measuring Power : Measuring Power Lecture Lecture 4: Measuring Power, 4: Measuring Power, Parasitic Capacitances & Layout Fall Fall 2011 2011 W. Rhett Davis NC State University ith significant material from ith significant material from abaey abaey handrakasan handrakasan and and ikoli ć Slide 1 © W. Rhett Davis NC State University ECE 546 Fall 2011 with significant material from with significant material from Rabaey Rabaey, , Chandrakasan Chandrakasan, and , and Nikoli Nikoli

This preview has intentionally blurred sections. Sign up to view the full version.

View Full Document
Announcements HW#1 Due Today HW#2 Due in 1 Week Layout Tutorial #1 Posted No Peer Grading for HW#1 Slide 2 © W. Rhett Davis NC State University ECE 546 Fall 2011
Summary of Last Lecture What are the different components of the power of a gate? What are the different quality metrics for a ate and which one is best? gate and which one is best? Slide 3 © W. Rhett Davis NC State University ECE 546 Fall 2011

This preview has intentionally blurred sections. Sign up to view the full version.

View Full Document
Today’s Lecture easuring Power/Energy in Measuring Power/Energy in SPICE (5.5.4) Parasitic Capacitances 23 33) (3.2.3, 3.3) Processing Technology & Layout (2.2-2.3) Slide 4 © W. Rhett Davis NC State University ECE 546 Fall 2011
Measuring Power in HSPICE TT T V Q T E dt t i T V dt t p T P DD tot tot DD DD avg 00 ) ( ) ( 1 T DD tot dt t i Q 0 ) ( Measure total charge flowing through the supply oltage (using INTEGRAL function in HSPICE) Slide 5 © W. Rhett Davis NC State University ECE 546 Fall 2011 voltage (using INTEGRAL function in HSPICE)

This preview has intentionally blurred sections. Sign up to view the full version.

View Full Document
Measuring Total Energy Vdd VDD! 0 1.8 .meas tran qtot INTEGRAL i(Vdd) FROM= [start] TO= [end] eas Etot PARAM=' 1*qtot' .meas Etot PARAM= -1.1q to t Why the minus sign? Slide 6 © W. Rhett Davis NC State University ECE 546 Fall 2011 What about M3 and M4?
Take Care in Creating the Netlist Make sure the 2 nd inverter is on a different supply (unless you want to measure the power issipated in that one too) Slide 7 © W. Rhett Davis NC State University ECE 546 Fall 2011 dissipated in that one, too)

This preview has intentionally blurred sections. Sign up to view the full version.

View Full Document
Measuring Static Power How to measure i G , i SP & i SN » 0 Volt Sources at ports to measure p » .OP analysys – Look for currents tabulated in HSPICE output i P » .TRAN analysis is too variable » Make sure that i G +i SP +i SN =0 D SP i G for V IN high » P stat(gate-leakage) = V DD i G V DD V IN N » P stat(drain-leakage) = V DD i SP for V IN low » P stat(gate-leakage) = V DD (-i G ) i SN Slide 8 © W. Rhett Davis NC State University ECE 546 Fall 2011 » P stat(drain-leakage) = V DD (-i SN )
Measuring Short-Circuit Energy C k 2 SC peak DD SC t I V E How to measure in HSPICE?

This preview has intentionally blurred sections. Sign up to view the full version.

View Full Document
This is the end of the preview. Sign up to access the rest of the document.

## This note was uploaded on 01/26/2012 for the course EE 546 taught by Professor Whett during the Spring '11 term at N.C. State.

### Page1 / 46

ece546fall11_04 - ECE ECE 546 VLSI Systems Design Lecture 4...

This preview shows document pages 1 - 10. Sign up to view the full document.

View Full Document
Ask a homework question - tutors are online