EE 330 Exam 1 Fall 2010

EE 330 Exam 1 Fall 2010 - EE 330 Exam 1 Fall 2010 Name_ _ _...

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EE 330 Name_ _ _ _ _ _ _ _ _ _ _ _ _ _ Exam 1 Fall 2010 Instructions: Students may bring 1 page of notes (front and back) to this exam. There are 8 questions and 6 problems. The points allocated to each question and each problem are as indicated. Please solve problems in the space provided on this exam and attach extra sheets only if you run out of space in solving a specific problem. If reference to a semiconductor processes is needed beyond what is given in a specific problem or question, assume a CMOS process is available with the following key process parameters; μ n C OX =100 μ A/v 2 p C OX = μ n C OX /3 ,V TNO =0.5V, V TPO = - 0.5V, C OX =2fF/ μ 2 , λ = 0, and γ = 0. If reference to a bipolar process is made, assume this process has key process parameters J S =10 -15 A/ μ 2 , β =100 and V AF = . If reference to a diode is made, assume the process parameter J S =10 -17 A/ μ 2 . If any other process parameters for MOS devices are needed, use the process parameters associated with the process described on the attachment to this exam. Specify clearly what process parameters you are using in any solution requiring process parameters. 1. (2pts) What type of carriers (majority or minority) carry current in the channel of a p-channel MOSFET? 2.
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EE 330 Exam 1 Fall 2010 - EE 330 Exam 1 Fall 2010 Name_ _ _...

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