EE 330 Exam 2 Fall 2009

EE 330 Exam 2 Fall 2009 - EE 330 Exam 2 Fall 2009 Name_ _ _...

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EE 330 Name_ _ _ _ _ _ _ _ _ _ _ _ _ _ Exam 2 Fall 2009 Instructions: Students may bring 2 page of notes (front and back) to this exam. There are 8 questions and 8 problems. The points allocated to each question are as indicated. The problems are worth 16 points each. Please solve problems in the space provided on this exam and attach extra sheets only if you run out of space in solving a specific problem. If references semiconductor processes are needed beyond what is given in a specific problem or question, assume a CMOS process is available with the following key process parameters; μ n C OX =100 μ A/v 2 p C OX = μ n C OX /3 ,V TNO =0.5V, V TPO = - 0.5V, C OX =2fF/ μ 2 , λ = 0, and γ = 0. If reference to a bipolar process is made, assume this process has key process parameters J S =10 -15 A/ μ 2 , β =100 and V AF = . If any other process parameters are needed, use the process parameters associated with the process described on the attachments to this exam. Specify clearly what process parameters you are using in any solution requiring process parameters. Also attached to this exam are three tables. One relates to FI and OD for static CMOS logic gates, a second to the small-signal equivalent of basic circuit elements, and a third to the basic amplifier configurations. 1. (2pts) Of the basic MOS amplifier structures, which is noted for a high input impedance, a low output impedance, and a voltage gain that is near unity?
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EE 330 Exam 2 Fall 2009 - EE 330 Exam 2 Fall 2009 Name_ _ _...

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