This preview has intentionally blurred sections. Sign up to view the full version.
View Full Document
Unformatted text preview: Page 1 of 11 EE 330 Name_ _ _ _ _ _ _ _ _ _ _ _ _ _ Exam 2 Spring 2011 Instructions: This is a 50minute exam. Students may bring 2 page of notes (front and back) to this exam. There are 8 questions and 5 problems. The points allocated to each question are as indicated. The problems are all equally weighted and worth 16 points each if solved correctly. Please solve problems in the space provided on this exam and attach extra sheets only if you run out of space in solving a specific problem. If references semiconductor processes are needed beyond what is given in a specific problem or question, assume a CMOS process is available with the following key process parameters; n C OX =100 A/v 2 p C OX = n C OX /3 ,V TNO =0.5V, V TPO =  0.5V, C OX =2fF/ 2 , = 0, and If reference to a bipolar process is made, assume this process has key process parameters J S =1015 A/ 2 , β=100 and V AF = ∞. If any other process parameters are needed, use the process parameters associated with the process described on the attachments to this exam. Specify clearly what process parameters you are using in any solution requiring process parameters. Also attached to this exam are two tables that have information about large and small signal models of devices and basic amplifier structures. 1. (4pts) In the box on the left, place a single x in the quadrant the correctly describes the channel carriers for a pchannel MOSFET. Do the same for the box on the right for the carriers in the baseregion that contribute to collector current in a vertical...
View
Full
Document
This document was uploaded on 01/31/2012.
 Fall '09

Click to edit the document details