EE 330 Exam 3 Fall 2010

EE 330 Exam 3 Fall 2010 - EE 330 Name_ _ _ _ _ _ _ _ _ _ _...

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Unformatted text preview: EE 330 Name_ _ _ _ _ _ _ _ _ _ _ _ _ _ Exam 3 Fall 2010 Instructions: Students may bring 3 page of notes (front and back) to this exam. There are 8 questions and 8 problems. The points allocated to each question are as indicated. The problems are worth 16 points each. Please solve problems in the space provided on this exam and attach extra sheets only if you run out of space in solving a specific problem. If references semiconductor processes are needed beyond what is given in a specific problem or question, assume a CMOS process is available with the following key process parameters; n C OX =100 A/v 2 , p C OX = n C OX /3 ,V TNO =0.5V, V TPO = - 0.5V, C OX =2fF/ 2 , = 0, and = 0. If reference to a bipolar process is made, assume this process has key process parameters J S =10-15 A/ 2 , =100 and V AF = . If any other process parameters are needed, use the process parameters associated with the process described on the attachments to this exam. Specify clearly what process parameters you are using in any solution requiring process parameters. Also attached to this exam are two tables. One relates to FI and OD for static CMOS logic gates and the other relates to the basic amplifier configurations. 1. (2pts) The cascode configuration is the cascade of two basic amplifier structures. In a bipolar process, what basic amplifier structure is the first stage of the cascode configuration? 2. (2pts) When building high-gain amplifiers, a cascade of individual stages such as the common-emitter configuration or the common-source configuration can provide a very high gain. very high gain....
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EE 330 Exam 3 Fall 2010 - EE 330 Name_ _ _ _ _ _ _ _ _ _ _...

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