EE 330 Final Exam Fall 2008

EE 330 Final Exam Fall 2008 - EE 330 Final Exam Fall 2008...

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Page 1 of 14 EE 330 Name_ _ _ _ _ _ _ _ _ _ _ _ _ _ Final Exam Fall 2008 Instructions. Students may bring 2 page of notes (front and back) to this exam. There are 10 questions and 8 problems. There are 2 points allocated to each question and 10 points allocated to each problem. Please solve problems in the space provided on this exam and attach extra sheets only if you run out of space in solving a specific problem. If references semiconductor processes are needed beyond what is given in a specific problem or question, assume a CMOS process is available with the following key process parameters; μ n C OX =100 μ A/v 2 p C OX = μ n C OX /3 ,V TNO =0.5V, V TPO = - 0.5V, C OX =2fF/ μ 2 , λ = 0, and γ = 0. If reference to a bipolar process is made, assume this process has key process parameters J S =10 -15 A/ μ 2 , β =100 and V AF = . If any other process parameters are needed, use the process parameters associated with the process described on the attachments to this exam. Specify clearly what process parameters you are using in any solution requiring process parameters. Also attached to this exam are three tables. One relates to FI and OD for static CMOS logic gates, a second to the small-signal equivalent of basic circuit elements, and a third to the basic amplifier configurations. 1. (2pts) What effect does the thickness and doping level of the base region of a BJT have on the performance of the BJT transistor? . 2. (2pts) If a Bipolar process is created that has a vertical pnp transistor, what type of material would be used in the creation of the epitaxial layer 3. (2pts)
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EE 330 Final Exam Fall 2008 - EE 330 Final Exam Fall 2008...

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