EE 330 Final Exam Fall 2009

EE 330 Final Exam Fall 2009 - EE 330 Final Exam Fall 2009...

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EE 330 Name_ _ _ _ _ _ _ _ _ _ _ _ _ _ Final Exam Fall 2009 Instructions. Students may bring 3 pages of notes (3 front + 3 back) to this exam. There are 8 questions and 8 problems. The points allocated to each question are as indicated. The problems are all worth 10 points. Please solve problems in the space provided on this exam and attach extra sheets only if you run out of space in solving a specific problem. If references semiconductor processes are needed beyond what is given in a specific problem or question, assume a CMOS process is available with the following key process parameters; μ n C OX =100 μ A/v 2 p C OX = μ n C OX /3 ,V TNO =0.5V, V TPO = - 0.5V, C OX =2fF/ μ 2 , λ = 0, and γ = 0. If reference to a bipolar process is made, assume this process has key process parameters for an npn transistor are J S =10 -15 A/ μ 2 , β n =100 and V AFn = and those for a pnp transistor are J S =10 -15 A/ μ 2 , β p =20 and V AFp = . If any other process parameters are needed, use the process parameters associated with the process described on the last page of this exam. Specify clearly what process parameters you are using in any solution requiring process parameters. Several tables that were provided as attachments to Exam 2 are appended at the end of the exam. 1. (2 pts) Describe what the term “self-aligned” in the context of semiconductor processing means. 2. (2 pts) In the ON 0.5 μ process, the minimum allowable drawn length is 0.6 μ . Assume you made a deal with the mask house so that they could make features with a drawn length of 0.3 μ and you used these new masks in the same process flow to make transistors with smaller gate lengths. Since it is recognized that devices with shorter lengths are smaller and operate faster, it could be argued that this change in mask
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EE 330 Final Exam Fall 2009 - EE 330 Final Exam Fall 2009...

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